TEFT4300(1999) データシートの表示（PDF） - Vishay Semiconductors
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TEFT4300 Datasheet PDF : 5 Pages
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TEFT4300
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Angle of Half Sensitivity
IC = 1 mA
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E=0
Ee = 1 mW/cm2,
l = 950 nm, VCE = 5 V
V(BR)CE 70
O
ICEO
CCEO
Ica
0.8
ϕ
V
1
200 nA
3
pF
3.2
mA
±30
deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
Ee = 1 mW/cm2,
l = 950 nm, IC = 0.1 mA
W VS = 5 V, IC = 5 mA,
RL = 100
W VS = 5 V, IC = 5 mA,
RL = 100
W VS = 5 V, IC = 5 mA,
RL = 100
lp
l0.5
VCEsat
ton
toff
fc
925
nm
875...1000
nm
0.3
V
2.0
ms
2.3
ms
180
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125
104
100
103
75
VCE=20V
RthJA
102
50
101
25
0
0
94 8308
20
40
60
80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20
94 8304
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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2 (5)
Document Number 81549
Rev. 2, 20-May-99
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