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A1879 データシートの表示(PDF) - New Jersey Semiconductor

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A1879
NJSEMI
New Jersey Semiconductor NJSEMI
A1879 Datasheet PDF : 2 Pages
1 2
J.E.II.S.U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
2SA1879
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= -80(V)(Min.)
• Low Collector Saturation Voltage
:VCE(sat)= -0.3(V)(Max.)@lc= -3.5A
• Large Current Capability-lc= -7A
APPLICATIONS
• Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
PIN LEASE
2.COLLECTOR
3 EMITTER
TO-220 package
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
-80
V
i i'
-80
V
Q
*C» - B -
VEBO Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-7
A
low
Collector Current-Peak
IB
Base Current-Continuous
-14
A
-1.5
A
- --L
» -.-Q
IBM
Base Current-Peak
Total Power Dissipation
PC
@ T0=25-C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-2
A
25
W
150
•c
-55-150
'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
5
'C/W
•••• R •*--
mm
DIM WIN MAX
A 16.70 17.00
B 9.80 10.20
C 4.40 4.80
D 0.70 0.90
F 3.20 3.40
H 2.50 2.70
J 0.50 0.70
K 13.80 14.20
L 1.10 1.30
N 4.98 5.18
Q 4.00 4.40
R 2.60 2.80
NJ Semi-Conductors reserves the right to change test eonditions. parameter limits and package dimensions without
notice, llttbrmation
to press. I lowever.
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NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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