MTD1N50E データシートの表示（PDF） - ON Semiconductor
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MTD1N50E Datasheet PDF : 12 Pages
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MTD1N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
V(BR)DSS
500
−
−
480
−
Vdc
−
mV/°C
IDSS
µAdc
−
−
10
−
−
100
IGSS
−
−
100
nAdc
VGS(th)
2.0
3.2
4.0
Vdc
−
6.0
−
mV/°C
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = Vdc, ID = 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 10 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 250 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
−
4.3
5.0
Ohm
Vdc
−
4.5
6.0
−
−
5.3
0.5
0.9
−
mhos
−
215
315
pF
−
30.2
42
−
6.7
12
−
8.0
20
ns
−
9.0
10
−
14
30
−
17
30
−
7.4
9.0
nC
−
1.6
−
−
3.8
−
−
5.0
−
Vdc
−
0.81
1.2
−
0.68
−
−
141
−
ns
−
82
−
−
58.5
−
−
0.65
−
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
LD
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
nH
−
3.5
−
−
4.5
−
−
7.5
−
nH
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