2SC2656 データシートの表示（PDF） - New Jersey Semiconductor
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2SC2656 Datasheet PDF : 2 Pages
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^s.m.i-Cond\jL(itot iPioducfa, (inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2656
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR,CEO= 400V(Min)
• High Switching Speed
• High Reliability
:,
APPLICATIONS
• Switching regulators
• DC-DC converter
• Solid state relay
• General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
400
V
VCEO(SUS) Collector-Emitter Voltage
400
V
VEBO Emitter-Base voltage
7
V
Ic
Collector Current-Continuous
7
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
2
A
80
W
150
"C
Tstg
Storage Temperature Range
-55-150
'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.5 r/w
'"' if f» i&
, '"2 "*3
3. BETTER
TO-3PN package
B—•• •••- C •«—
w. ~ 4
Y^ - F- ^S
*uQ4JirI//- ^\ ' ;
Al'E.
f \:
fH
K
j
i
r**
HB
G * -L
^^..j
-- 0
- -«-R **-H-*-
mm
DIM MIN MAX
A 19.60 20.10
B 15.50 15,70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3,40 3.60
G 2,90 3,20
H 3.20 3.40
j 0,595 0.605
K 20.00 20.70
L 1.90 2.20
N 10,89 10.91
U 4,90 5.10
R 3.35 3.45
S 1.995 2.100
U 5.90 §.10
Y 9.90 10,10
N'.l Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions nithout
notice. Information furnished by N.I Semi-Conductors is helieved to he both accurate mid reliable at the time of uoin
(it press, I lo\\e\er. N.I Seiiii-Conduclors assumes no responsibility for an) errors or omissions discovered in its use.
N'.l Scnii-C'tiiiducioi's encourages cuilomers to xerily that daluslieels are ciinxMil before placing iirders.
Semi-Conductors
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