2SC2656 データシートの表示（PDF） - New Jersey Semiconductor
部品番号
コンポーネント説明
メーカー
2SC2656 Datasheet PDF : 2 Pages
| |||
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lo= 10mA; IB= 0
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 30mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; lc= 0
VcE(sat) Collector-Emitter Saturation Voltage IC=7A; IB= 1.4A
VeE(sat) Base-Emitter Saturation Voltage
lc= 7A; IB= 1 .4A
ICBO
Collector Cutoff Current
VCB= 450V; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V; lc=0
hFE
DC Current Gain
Switching times
lc= 3A; VCE= 4V
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
|C=7A, IB1=-IB2= 1-4A
RL= 300 ;PW=20|J s
Duty Cycled 2%
2SC2656
MIN TYP. MAX UNIT
400
V
400
V
450
V
7
V
1.5
V
1.2
V
1.0 mA
0.1 mA
10
1.5
\i S
3.0
MS
1.5 M s
Share Link: 