C5417 データシートの表示（PDF） - Quanzhou Jinmei Electronic

部品番号

コンポーネント説明

メーカー

C5417

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0

VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3 A

VBEsat Base-emitter saturation voltage

IC=1.5A; IB=0.3 A

ICBO

Collector cut-off current

VCB=600V; IE=0

ICES

Collector cut-off current

VCE=1200V; RBE=0

IEBO

Emitter cut-off current

VEB=9V; IC=0

hFE-1

DC current gain

IC=0.1A ; VCE=5V

hFE-2

DC current gain

IC=1.0A ; VCE=5V

Switching times

ts

Storage time

tf

Fall time

IC=1.5A;IB1=0.3A ;IB2=-0.6A

Product Specification

2SC5417

MIN TYP. MAX UNIT

600

V

1.0

V

1.5

V

10 μA

1.0 mA

1.0 mA

30

50

10

2.5 μs

0.15 μs

2

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