2SC2438 データシートの表示（PDF） - New Jersey Semiconductor

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2SC2438

Silicon NPN Power Transistor

New Jersey Semiconductor 

JEIIEU ^zmi-fLonauetoi ^Product*, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC2438

DESCRIPTION

• Low Collector Saturation Voltage-

:VCE(satr 0.5(V)(Max)@ lc= 4A

• High Switching Speed

• High Reliability

APPLICATIONS

• Switching regulators

• Ultrasonic generators

PIN 1.BASE

2. COLLECT OR

3. BETTER

TO-220C package

• General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

.UNIT

* B»

u-yy 1 -» V *i ,.,- F

*>Q

UA

A

»* - S

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

Ic

Collector Current-Continuous

IB

Base Collector Current-Continuous

Total Power Dissipation

PC

© TV-P'iT'

Tj

Junction Temperature

Tstg

Storage Temperature Range

150

V

100

V

7

V

7

A

2

A

50

W

150

"C

-55-150 °c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX

2.5

UNIT

-c/w

1

S-

I

'

I-i* * L

K

T

TD

H c* h

t_.

C^

«•« J

» R|-

1

mm

DIM MEN MAX

A 15.50 15.90

B 9.90 10.20

_, 4.20 £.. 50

D 0.70 0.90

F 3.40 3.70

G 4.98 5.18

H 2.68 2.90

0.44 0 60

K 13.00 13.40

L 1.20 1,45

Q 2 70 2.90

R 2.30 2.70

S 1.29 1.35

U 6.45 6.65

U 8.66 8.86

N.I Senii-Conductoi-s reserves the right to change test conditions, parameter limits and package dimensions without

nonce. Information furnished hy N.I Semi-Conductors is believed to he both accurate mid reliable at the time of going

ID press. I kmever. N.I Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use."

N.I Semi-Conduclors enaiurayes customers to u-rify thai datasheets are currcul helotv placing orders.

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