2SC2438 データシートの表示（PDF） - New Jersey Semiconductor

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2SC2438

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

2SC2438

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

i

V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0

MIN TYP. MAX UNIT

100

V

V(BR)CBO Collector-Base Breakdown Voltage

lc= 0.1mA; IE= 0

150

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 0.1mA; lc= 0

7

V

VcE(sat) Collector-Emitter Saturation Voltage

|c= 4A; IB= 0 4A

VBE(sat) Base-Emitter Saturation Voltage

lc= 4A; IB= 0.4A

ICBO

Collector Cutoff Current

VCB= 150V; IE=0 '

0.5

V

1.2

V

100 M A

IEBO

Emitter Cutoff Current

VEB= 7V; lc= 0

100 u A

hFE

DC Current Gain

lc= 4A; Vce= 1V

30

Switching Times

ton

Turn-On Time

Utg

Storage Time

tf

Fall Time

lc= 4A; IB1= -IB2= 0.4A; RL= 5O

0.5

Ms

2.5

Ms

0.3

Ms

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