CS299 データシートの表示（PDF） - ON Semiconductor

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CS299

Darlington Lamp Driver

ON Semiconductor 

CS299

MAXIMUM RATINGS*

Rating

Storage Temperature Range, TS

Ambient Operating Temperature

Collector Breakdown Voltage

*The maximum package power dissipation must be observed.

Value

Unit

–65 to +150 °C

–40 to 140

°C

80

V

ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified.)

Characteristic

Test Conditions

Supply Requirements

Saturation Voltage

Collector Breakdown Voltage

Collector Cut Off Current (ICEO)

DC Current Gain (HFE)

NPN β (Q1)

VBE (in saturation)

Diode Forward Voltage (D1)

IB1 = 0.6 mA, IC2 = 350 mA

TJ = –30°C

TJ = 150°C

IC1 = IC2 = 1.0 mA, RBE = 200, VC1 = VC2

VCE1 = VCE2 = 60 V, RBE = 200

VC1 =VC2 = 1.0 V, IB1 = 100 µA

IB1 = 1.0 µA, VCE2 = 0 V, VCE1 = 1.5 V

IB1 = 0.6 mA, IC1 = 50 mA, IC2 = 350 mA

ID1 = 25 mA

Min Typ Max

Unit

–

– 0.60

V

–

– 0.55

V

–

– 0.65

V

80

–

–

V

–

–

10

µA

1000 –

50

–

–

–

–

(IC1 + IC2)/IB1

–

IC1/IB1

2.0

V

0.5

–

1.5

V

PACKAGE PIN DESCRIPTION

PIN SYMBOL

FUNCTION

B

Base of input darlington.

C1

Collector of darlington input device.

C2

Collector of darlington output driver.

GND

Ground. Emitter of dartlington driver. Base/Emitter resistor and substrate are also connected here.

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