2N6497 データシートの表示（PDF） - Inchange Semiconductor

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2N6497

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2N6497/6498/6499

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 250V(Min)- 2N6497

= 300V(Min)- 2N6498

= 350V(Min)- 2N6499

·DC Current Gain-

: hFE= 10-75@IC= 2.5A

APPLICATIONS

·Designed for high voltage inverters, switching regulators

and line operated amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

2N6497

350

VCBO Collector-Base Voltage 2N6498

400

V

2N6499

450

2N6497

250

VCEO Collector-Emitter Voltage 2N6498

300

V

2N6499

350

VEBO Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

10

A

IB

Base Current

2

A

PD

Total Power Dissipation@TC=25℃

80

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Rresistance,Junction to Case

MAX UNIT

1.56 ℃/W

isc Website：www.iscsemi.cn

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