2N6497 データシートの表示（PDF） - Inchange Semiconductor

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2N6497

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2N6497/6498/6499

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

2N6497

250

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

2N6498 IC= 25mA; IB= 0

300

2N6499

350

VCE(sat)-1

Collector-Emitter

Saturation Voltage

2N6497

2N6498

2N6499

IC= 2.5A; IB= 0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5A

VBE(sat)-2 Base-Emitter Saturation Voltage

ICEX

Collector

Cutoff Current

2N6497

2N6498

2N6499

IEBO

Emitter Cutoff Current

IC= 5A; IB= 2A

VCE= 350V;VBE(off)= 1.5V

VCE= 175V;VBE(off)= 1.5V ;TC=100℃

VCE= 400V;VBE(off)= 1.5V

VCE= 200V;VBE(off)= 1.5V ;TC=100℃

VCE= 450V;VBE(off)= 1.5V

VCE= 225V;VBE(off)= 1.5V ;TC=100℃

VEB= 6V; IC= 0

hFE-1

DC Current Gain

IC= 2.5A ; VCE= 10V

10

hFE-2

DC Current Gain

IC= 5A ; VCE= 10V

3

fT

Current-Gain—Bandwidth Product

IC= 0.25A;VCE= 10V;ftest=1.0MHz

5

Switching Times;Duty Cycle≤2%

tr

Rise Time

tS

Storage Time

tf

Fall Time

VCC= 125V,tp= 0.1ms

IC=2.5A;IB1= -IB2=0.5 A

MAX UNIT

V

1.0

1.25

V

1.5

5.0

V

1.5

V

2.5

V

1.0

10

1.0

10

mA

1.0

10

1.0

mA

75

MHz

1.0

μs

2.5

μs

1.0

μs

isc Website：www.iscsemi.cn

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