2N6436 データシートの表示（PDF） - New Jersey Semiconductor
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2N6436 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS ( Tc = 25dC unlessothervuse noted )
Characteristic
Symbol
OFF CHARACTERISTICS
Collector -Emitter Sustaining Voltage (1)
( I =50 mA, IB= 0 )
Collector Cutoff Current
( Ve(= 40 V, !.• 0 )
(VCB=50V, l.= 0)
( VCI= 60 V, l,= 0 )
Collector Cutoff Current
(VCB= Rated VCB, le= 0 )
Emitter Cutoff Current
(VEB=6.0V, lc=0)
2N6436
2N6437
2N6438
2N6436
2N6437
2N6438
VCKX«»)
'CEO
ICBO
IEBO
ON CHARACTERISTICS (1)
DC Current Gain
(lc=0.5A,Vce=2.0V)
(IC=10A,VCE=2.0V)
( lc= 25 A, VCE= 2.0V )
Collector-Emitter Saturation Voltage
(IC=1PA,IB=1.0A)
( lc= 25 A, IB= 2.5A )
Base-Emitter Saturation Voltage
(IC=10A, IB=1.0A)
(IC=25A, IB=2.5A)
hFE
VeaiMt
Vm*
DYNAMIC CHARATERISTICS
Current-Gain Bandwidth Product (2)
(I0= 1.0 A,VCE= 10 V, f= 10MHz )
'T
Output Capacitance
c*
(VCB= 10 V, IE= 0, fs 0.1MHz )
SWITCHING CHARACTERISTICS
Rise Time
VCC=80V, IC=10A
t,
Storage Time
!B1*-lBf=1.0A,
ts
Fall Time
t,
(1) Pulse Test: Pulse width •300 us , Duty Cycle 2.0%
(2>fT= Ih.J-f^
2N6436, 2N6437,2N6438 PNP
Mln
Max
Unit
V
80
100
120
UA
50
50
50
UA
10
uA
100
30
20
80
12
V
1.0
1.8
V
1.8
2.5
MHZ
40
PF
700
0.3
us
2.0
us
0.4
us
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