MII200-12A4 データシートの表示（PDF） - IXYS CORPORATION
部品番号
コンポーネント説明
メーカー
MII200-12A4 Datasheet PDF : 4 Pages
| |||
MII 200-12 A4 MID 200-12 A4
MDI 200-12 A4
90
mJ
Eon 60
30
120
td(on)
tr
ns
80 t
Eon
VCE = 600V
W VGE = ±15V 40
RG = 6.8
TJ = 125°C
0
0
0
100
200
300 A
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
50
mJ
40
Eon
30
VCE = 600V
VGE = ±15V
IC = 150A
TJ = 125°C
20
200
td(on)
Eon
ns
160
t
120
tr 80
10
40
0
0
4
W0
8 12 16 20 24 28
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
400
A
ICM 300
200
100
RG = 6.8W
TJ = 125°C
VCEK < VCES
0
0 200 400 600 800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
80
800
mJ
Eoff 60
40
20
0
0
td(off)
ns
600
t
Eoff
400
VCE = 600V
VGE = ±15V
RG = 6.8W 200
TJ = 125°C
tf
0
100
200
300 A
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
50
mJ
40
Eoff
30
VCE = 600V
VGE = ±15V
IC = 150A
TJ = 125°C
20
td(off)
Eoff
2000
ns
1600
t
1200
800
10
400
0
0
4
8
12
16
20
Wtf 0
24 28
RG
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0.1
ZthJC
0.01
diode
IGBT
0.001
0.0001
single pulse
0.00001
0.00001 0.0001 0.001
0.01
0.1
t
200-12
s1
Fig. 12 Typ. transient thermal impedance
© 2000 IXYS All rights reserved
4-4
Share Link: 