2N4923 データシートの表示（PDF） - Continental Device India Limited
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2N4923 Datasheet PDF : 2 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
2N4923
TO-126
ECB
General Purpose Power Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
Collector -Base Voltage
VCBO
Collector -Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Base Current
IB
Power Dissipation @ Tc=25 deg C
PD
Derate Above 25 deg C
Operating And Storage Junction
Tj, Tstg
Temperature Range
Lead Temperature for Soldering 1/16" TL
from Body for 10 Seconds.
Thermal Resistance
Junction to Case
Rth (j-c)
VALUE
80
80
5.0
3.0
1.0
30
0.24
-65 to +150
260
4.16
UNIT
V
V
V
A
A
W
W/deg C
deg C
deg C
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP MAX
Collector -Emitter Sustaining Voltage VCEO(sus) IC=100mA, IB=0
80 -
-
Collector Cut off Current
ICEO
VCE=40V, IB=0
-
- 0.5
ICBO
VCB=80V, IE=0
-
- 0.1
ICEX
VCB=80V,VEB(0ff)=1.5V
-
- 0.1
Tc=125 deg C
VCB=80V,VEB(0ff)=1.5V
-
- 0.5
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
- 1.0
DC Current Gain
hFE *
IC=50mA,VCE=1V
40 -
-
IC=500mA,VCE=1V
30
150
IC=1A,VCE=1V
10
-
Collector Emitter Saturation Voltage VCE(sat)* IC=1A, IB=0.1A
-
0.6
Base Emitter Saturation Voltage
VBE(sat)* IC=1A, IB=0.1A
-
1.3
Base Emitter on Voltage
VBE(on) * IC=1A,VCE=1V
-
1.3
DYNAMIC CHARACTERISTICS
Transistors frequency
ft
IC=250mA,VCE=10V,f=1MHz 3.0 -
-
Output Capacitance
Cob
VCB=10V, IE=0, f=100kHz
-
- 100
Small Signal Current Gain
hfe
IC=250mA,VCE=10V,f=1kHz 25 -
-
*Pulse Test PW=300us, Duty Cycle=2%
UNIT
V
mA
mA
mA
mA
mA
-
-
V
V
V
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 2
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