STP1013 データシートの表示（PDF） - STANSON TECHNOLOGY

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STP1013

Dual P Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

STP1013

Dual P Channel Enhancement Mode MOSFET

-0.45A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

OFF CHARACTERISTICS

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

On-State Drain Current

Symbol

V(BR)DSS

VGS(th)

IGSS

IDSS

ID(on)

Drain-source On-Resistance RDS(on)

Forward Transconductance

Diode Forward Voltage

gfs

VSD

Condition

VGS=0V,ID=-250uA

VDS=VGS,ID=-250uA

VDS=0V,VGS=±12V

VDS=20V,VGS=0V

VDS=20V,VGS=0V

TJ=55℃

VDS≦-4.5V,VGS=-5V

VGS=-4.5V,ID=-0.45A

VGS=-2.5V,ID=-0.35A

VGS=-1.8V,ID=-0.25A

VDS=-10V,ID=-0.25A

IS=-0.15A,VGS=0V

Min Typ Max Unit

-20

V

-0.35

-0.7

420

580

750

0.4

-0.8

-0.8 V

±100 nA

-1

uA

-5

A

520

700 mΩ

950

S

-1.2 V

DYNAMIC

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Time

Turn-Off Time

Qg

Qgs

Qgd

Td(on)

tr

Td(off)

tf

VDS=-10V,VGS=-4.5V,

VDS=-0.6A

VDD=-10V, RL=10Ω, ID=-0.4A,

VGEN=-4.5V, RG=6Ω

1.5

0.3

0.35

5

15

8

1.4

2.0

nC

10

25 nS

15

1.8

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP1013 2009. V1

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