IRLS540A データシートの表示（PDF） - Fairchild Semiconductor

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IRLS540A

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

FEATURES

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n Extended Safe Operating Area

n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V

n Lower RDS(ON) : 0.046Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25℃)

Continuous Drain Current (TC=100℃)

Drain Current-Pulsed

①

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

②

Avalanche Current

①

Repetitive Avalanche Energy

①

Peak Diode Recovery dv/dt

③

Total Power Dissipation (TC=25℃)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

IRLS540A

BVDSS = 100 V

RDS(on) = 0.058Ω

ID = 17 A

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

Value

100

17

12

98

±20

385

17

4.4

6.5

44

0.29

- 55 to +175

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/℃

℃

Thermal Resistance

Symbol

RθJC

RθJA

Characteristic

Junction-to-Case

Junction-to-Ambient

Typ.

--

--

Max.

3.4

62.5

Units

oC/W

Rev. A

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