IRLS630A データシートの表示（PDF） - Fairchild Semiconductor
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IRLS630A Datasheet PDF : 7 Pages
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Advanced Power MOSFET
FEATURES
! Logic-Level Gate Drive
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V
! Lower RDS(ON) : 0.335Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25℃)
Continuous Drain Current (TC=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
IRLS630A
BVDSS = 200 V
RDS(on) = 0.4 Ω
ID = 6.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
200
6.5
4.1
32
±20
56
6.5
3.6
5
36
0.29
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.47
62.5
Units
oC/W
Rev. A
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