IRLS630A データシートの表示（PDF） - Fairchild Semiconductor

部品番号

コンポーネント説明

メーカー

IRLS630A

Advanced Power MOSFET

Fairchild Semiconductor 

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics

V

GS

Top : 7.0 V

6.0 V

101

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V

Bottom : 3.0 V

100

10-1

10-1

@ Notes :

1. 250 µs Pulse Test

2. T = 25 oC

C

100

101

V , Drain-Source Voltage [V]

DS

Fig 3. On-Resistance vs. Drain Current

1.00

0.75

V =5V

GS

0.50

0.25

0.00

0

V = 10 V

GS

@@ NN oo tt ee ::

TT

= 25 oC

J

5

10

15

20

25

30

I , Drain Current [A]

D

Fig 5. Capacitance vs. Drain-Source Voltage

900

720

C iss

Ciss= Cgs+ Cgd ( Cds= shorted )

Coss= Cds+ Cgd

Crss= Cgd

540

360

C oss

180

C rss

@ Notes :

1. VGS = 0 V

2. f = 1 MHz

0

100

101

VDS , Drain-Source Voltage [V]

IRLS630A

Fig 2. Transfer Characteristics

101

150 oC

100

25 oC

- 55 oC

@ Notes :

1. VGS = 0 V

2. VDS = 40 V

3. 250 µs Pulse Test

10-1

0

2

4

6

8

10

VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward Voltage

101

100

150 oC

25 oC

@ Notes :

1. VGS = 0 V

2. 250 µs Pulse Test

10-1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source Voltage

6

V = 40 V

DS

V = 100 V

DS

4

V = 160 V

DS

2

@ Notes : I = 9 A

D

0

0

4

8

12

16

20

Q , Total Gate Charge [nC]

G

Share Link: