FJNS3212R データシートの表示（PDF） - Fairchild Semiconductor

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FJNS3212R

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

FJNS3212R

Switching Application (Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R=47KΩ)

• Complement to FJNS4212R

1

TO-92S

1.Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

40

V

40

V

5

V

100

mA

300

mW

150

°C

-55 ~ 150

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

BVCBO

Collector-Base Breakdown Voltage

IC=100µA, IE=0

40

BVCEO

Collector-Emitter Breakdown Voltage IE=1mA, IB=0

40

ICBO

Collector Cut-off Current

VCB=30V, IE=0

hFE

DC Current Gain

VCE=5V, IC=1mA

100

VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA

Cob

Output Capacitance

VCB=10V, IE=0

f=1MHz

fT

Current Gain Bandwidth Product

VCE=10V, IC=5mA

R

Input Resistor

32

Equivalent Circuit

C

R

B

E

Typ.

3.7

250

47

Max.

0.1

600

0.3

Units

V

V

µA

V

pF

MHz

62

KΩ

©2002 Fairchild Semiconductor Corporation

Rev. A, August 2002

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