MPSW55 データシートの表示（PDF） - ON Semiconductor
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MPSW55 Datasheet PDF : 4 Pages
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MPSW55, MPSW56
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −1.0 mAdc, IB = 0)
MPSW55
MPSW56
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = −40 Vdc, IB = 0)
(VCE = −60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
(VCB = −60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0)
ON CHARACTERISTICS(1)
MPSW55
MPSW56
MPSW55
MPSW56
DC Current Gain
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −250 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = −250 mAdc, IB = −10 mAdc)
Base−Emitter On Voltage
(IC = −250 mAdc, VCE = −5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = −250 mAdc, VCE = −5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = −10 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V(BR)CEO
V(BR)EBO
ICES
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Cobo
Min
Max
−60
−
−80
−
−4.0
−
−
−0.5
−
−0.5
−
−0.1
−
−0.1
−
−0.1
100
−
50
−
−
−0.5
−
−1.2
50
−
−
15
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
−
Vdc
Vdc
MHz
pF
400
TJ = 125°C
200
25°C
-55°C
100
80
60
40
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
IC, COLLECTOR CURRENT (mA)
-50 -70 -100
Figure 1. DC Current Gain
VCE = -1.0 V
-200 -300 -500
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