HYB3165165TL-50 データシートの表示（PDF） - Siemens AG

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HYB3165165TL-50

4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Siemens AG 

HYB3164(5)165T(L)-50/-60

4M x 16 EDO-DRAM

Absolute Maximum Ratings

Operating temperature range..............................................................................................0 to 70 ˚C

Storage temperature range.........................................................................................– 55 to 150 ˚C

Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V

Power supply voltage....................................................................................................-0.5V to 4.6 V

Power dissipation......................................................................................................................1.0 W

Data out current (short circuit)..................................................................................................50 mA

Note

Stresses above those listed under „Absolute Maximum Ratings“ may cause permanent damage of

the device. Exposure to absolute maximum rating conditions for extended periods may effect device

reliability.

DC Characteristics

TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, (values in brackets for HYB 3165165J/T)

Parameter

Symbol Limit Values Unit Note

min. max.

Input high voltage

Input low voltage

Output high voltage (LVTTL)

Output „H“ level voltage (Iout = -2mA)

VIH

2.0

Vcc+0.3 V 1)

VIL

– 0.3 0.8

V 1)

VOH

2.4

–

V

Output low voltage (LVTTL)

Output „L“level voltage (Iout = +2mA)

VOL

–

0.4

V

Output high voltage (LVCMOS)

Output „H“ level voltage (Iout = -100uA)

VOH

Vcc-0.2 -

V

Ouput low voltage (LVCMOS)

Output „L“ level voltage (Iout = +100uA)

VOL

-

0.2

V

Input leakage current,any input

(0 V < Vin < Vcc , all other pins = 0 V

II(L)

–2

2

µA

Output leakage current

(DO is disabled, 0 V < Vout < Vcc )

IO(L)

–2

2

µA

Average Vcc supply current:

ICC1

-50 ns version

–

-60 ns version

–

(RAS, CAS, address cycling: tRC = tRC min.)

110 (140) mA 2) 3) 4)

100 (120) mA

Standby Vcc supply current

(RAS=CAS= Vih)

ICC2

–

2

mA –

Semiconductor Group

37

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