HYB3164165T-50 データシートの表示（PDF） - Infineon Technologies
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HYB3164165T-50 Datasheet PDF : 30 Pages
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HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 ˚C,VCC = 3.3 V ± 0.3V , tT = 2 ns
Parameter
Symbol
Limit Values
-50
-60
min. max. min. max.
OE pulse width
tOEP
7
–
10
–
OE hold time from CAS high
tOEHC 7
–
10
–
WE pulse width to output disable at CAS tWPZ 7
–
10
–
high
Output buffer turn-off delay from WE tWPZ 0
10
0
10
Unit Note
ns
ns
ns
ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write
tPRWC
51
–
66
–
ns
cycle time
CAS precharge to WE
tCPWD 41
–
49
–
ns
CAS before RAS refresh cycle
CAS setup time
tCSR
5
–
5
–
ns
CAS hold time
tCHR
8
–
10
–
ns
RAS to CAS precharge time
tRPC
5
–
5
–
ns
Write to RAS precharge time
tWRP
8
–
10
–
ns
Write hold time referenced to RAS
tWRH
8
–
10
–
ns
CAS-before-RAS counter test cycle
CAS precharge time (CAS-before-RAS tCPT
35
–
40
–
ns
counter test cycle)
Self Refresh Cycle
RAS pulse width during self refresh
RAS precharge time during self refresh
CAS hold time during self refresh
tRASS
tRPS
tCHS
100k _
84
_
-50 _
100k _
104 _
-50 _
ns 17
ns 17
ns 17
Semiconductor Group
41
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