HYB3164165T-50 データシートの表示（PDF） - Infineon Technologies

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HYB3164165T-50

4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Infineon Technologies 

4M x 16-Bit Dynamic RAM

(4k & 8k Refresh, EDO-version)

HYB 3164165T(L) -50/-60

HYB 3165165T(L) -50/-60

Preliminary Information

• 4 194 304 words by 16-bit organization

• 0 to 70 ˚C operating temperature

• Fast access and cycle time

RAS access time:

50 ns (-50 version)

60 ns (-60 version)

Cycle time:

84 ns (-50 version)

104 ns (-60 version)

CAS access time:

13 ns ( -50 version)

15 ns ( -60 version)

• Hyper page mode (EDO) cycle time

20 ns (-50 version)

25 ns (-60 version)

• Single + 3.3 V (± 0.3V) power supply

• Low power dissipation

max. 396 active mW ( HYB 3164165T(L)-50)

max. 360 active mW ( HYB 3164165T(L)-60)

max. 504 active mW ( HYB 3165165T(L)-50)

max. 432 active mW ( HYB 3165165T(L)-60)

7.2 mW standby (TTL)

720 W standby (MOS)

14.4 mW Self Refresh (L-version only)

• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),

RAS-only refresh, hidden refresh and self refresh modes

• Hyper page mode (EDO) capability

• 2 CAS / 1 WE byte control

• 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165T(L))

• 4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165T(L))

• Plastic Package:

P-TSOPII-54-1 500 mil HYB 3164(5)165T(L)

Semiconductor Group

31

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