HYB3164165T-50 データシートの表示（PDF） - Infineon Technologies

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HYB3164165T-50

4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)

Infineon Technologies 

HYB3164(5)165T(L)-50/-60

4M x 16 EDO-DRAM

DC Characteristics (cont’d)

TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, (values in brackets for HYB 3165165J/T)

Parameter

Symbol Limit Values Unit Note

min. max.

Average Vcc supply current, during RAS-only

ICC3

refresh cycles:

-50 ns version

–

-60 ns version

–

(RAS cycling: CAS = VIH: tRC = tRC min.)

110 (140) mA 2) 4)

100 (120) mA

Average Vcc supply current,

ICC4

Hyper page mode (EDO):

-50 ns version

–

-60 ns version

–

(RAS = VIL, CAS, address cycling: tHPC=tHPC min.)

Standby Vcc supply current

(RAS=CAS= Vcc-0.2V)

ICC5

–

115 (150) mA 2) 3) 4)

100 (120) mA

200

A–

Average Vcc supply current, during CAS-before- ICC6

RAS refresh mode:

-50 ns version

–

-60 ns version

–

(RAS, CAS cycling: tRC = tRC min.)

110 (140) mA 2) 4)

100 (120) mA

Self Refresh Current (L-version only)

ICC7

–

400

A

Average Power Supply Current during Self Refresh.

(CBR cycle with tRAS>TRASSmin, CAS held low,

WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)

Capacitance

TA = 0 to 70 ˚C,VCC = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A11,A12)

CI1

–

5

pF

Input capacitance (RAS, CAS, WRITE, OE)

CI2

–

7

pF

I/O capacitance (I/O1-I/O16)

CIO

–

7

pF

Semiconductor Group

38

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