BF991 データシートの表示（PDF） - Philips Electronics
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BF991 Datasheet PDF : 5 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF991
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
ID
ID(AV)
IG1-S
IG2-S
Ptot
Tstg
Tj
drain-source voltage
drain current (DC)
average drain current
gate 1-source current
gate 2-source current
total power dissipation
storage temperature
junction temperature
up to Tamb = 60 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air; note 1
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
MIN.
−
−
−
−
−
−
−65
−
MAX.
20
20
20
±10
±10
200
+150
150
UNIT
V
mA
mA
mA
mA
mW
°C
°C
VALUE
460
UNIT
K/W
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Ptot
(mW)
100
MGE792
0
0
100
200
Tamb (°C)
Fig.2 Power derating curve.
April 1991
3
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