MMBT5401(2004) データシートの表示（PDF） - Fairchild Semiconductor

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MMBT5401
(Rev.:2004)

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

200

VCE = 5V

150

125 oC

100

25 oC

50

- 40 oC

0

1E-4

1E-3

0.01

0.1

1

IC - COLLECTOR CURRENT (A)

Figure 1. Typical Pulsed Current Gain

vs Collector Current

1.0

0.8

- 40 oC

25 oC

0.6

125 oC

0.4

0.2

0.1

β

β β = 10

1

10

100

IC - COLLECTOR CURRENT (mA)

Figure 3. Base-Emitter Saturation

Voltage vs Collector Current

100

V CB = 10 0V

10

1

0.1

25

50

75

100

125

150

T A - AM BIENT TE MPE RATURE (°C)

Figure 5. Collector-Cutoff Current

vs Ambient Temperature

0.4

ββ = 10

0.3

β

0.2

25 oC

0.1

0.0

0.1

125 oC

- 40 oC

1

10

100

IC - COLLECTOR CURRENT (mA)

Figure 2. Collector-Emitter Saturation

Voltage vs Collector Current

1.0

0.8

- 40 oC

25 oC

0.6

125 oC

0.4

V = 5V

CE

0.2

0.1

1

10

100

IC - COLLECTOR CURRENT (mA)

Figure 4. Base-Emitter On Voltage vs

Collector Current

Between Emitter-Base

220

210

200

190

180

170

0.1

1

10

100

1000

RESISTANCE (kΩ)

Ω

Figure 6. Collector-Emitter Breakdown Voltage

with Resistance Between Emitter-Base

©2004 Fairchild Semiconductor Corporation

Rev. B1, August 2004

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