BF5020W データシートの表示（PDF） - Infineon Technologies

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BF5020W

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF5020...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics - (verified by random sampling)

Forward transconductance

VDS = 5 V, ID = 10 mA, VG2S = 4 V

Gate1 input capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V

Output capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V

gfs

Cg1ss

Cdss

-

34

- mS

-

2.4

- pF

-

1

-

Power gain

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

Gp

dB

-

26

-

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 45 MHz

-

32

-

Noise figure

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 45 MHz

F

dB

-

1.2

-

-

0.8

-

Gain control range

VDS = 5 V, VG2S = 4...0 V

Cross-modulation1), VDS = 5 V, RG1 = 120 kΩ

AGC = 0

AGC = 10 dB

AGC = 40 dB

∆Gp

Xmod

-

45

-

dBµV

-

98

-

-

96

-

-

106

-

1Input level for k = 1%; fw = 50 MHz, funw = 60 MHz

3

2009-10-01

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