BF5030(2006) データシートの表示（PDF） - Infineon Technologies

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BF5030
(Rev.:2006)

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF5030...

Silicon N-Channel MOSFET Tetrode

• Low noise gain controlled input stages of UHF-and

VHF - tuners with 3V up to 5V supply voltage

• Integrated gate protection diodes

• Low noise figure

• High gain, high forward transadmittance

• Improved cross modulation at gain reduction

3

4

2

1

AGC

G2

HF

G1

Input

RG1

VGG

Drain

HF Output

+ DC

GND

EHA07461

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BF5030W

Package

Pin Configuration

Marking

SOT343 1=D 2=S 3=G1 4=G2 -

-

KXs

Maximum Ratings

Parameter

Symbol

Drain-source voltage

Continuous drain current

Gate 1/ gate 2-source current

Gate 1/ gate 2-source voltage

Total power dissipation

TS ≤ 78 °C

VDS

ID

±IG1/2SM

±VG1/G2S

Ptot

Storage temperature

Tstg

Channel temperature

Tch

Thermal Resistance

Parameter

Symbol

Channel - soldering point1)

Rthchs

1For calculation of RthJA please refer to Application Note Thermal Resistance

Value

8

25

1

6

200

-55 ... 150

150

Value

≤ 280

Unit

V

mA

V

mW

°C

Unit

K/W

1

2006-04-13

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