BF5030W(2006) データシートの表示（PDF） - Infineon Technologies

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BF5030W
(Rev.:2006)

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF5030...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Drain-source breakdown voltage

ID = 1 µA, VG1S = 0 , VG2S = 0

Gate1-source breakdown voltage

+IG1S = 10 mA, VG2S = 0 , VDS = 0

Gate2-source breakdown voltage

+IG2S = 10 mA, VG1S = 0 , VDS = 0

Gate1-source leakage current

VG1S = 6 V, VG2S = 0 , VDS = 0

Gate2-source leakage current

VG2S = 6 V, VG1S = 0 , VDS = 0

Drain current

VDS = 3 V, VG1S = 0 , VG2S = 3 V

Drain-source current

VDS = 3 V, VG2S = 3 V, RG1 = 68 kΩ

V(BR)DS

12

-

-V

+V(BR)G1SS 6

-

15

+V(BR)G2SS 6

-

15

+IG1SS

-

-

50 nA

+IG2SS

-

-

50

IDSS

-

-

100

IDSX

-

12

- mA

Gate1-source pinch-off voltage

VDS = 3 V, VG2S = 3 V, ID = 20 µA

Gate2-source pinch-off voltage

VDS = 3 V, VG1S = 3 V, ID = 20 µA

VG1S(p)

VG2S(p)

-

0.6

-V

-

0.7

-

2

2006-04-13

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