BF5030(2006) データシートの表示（PDF） - Infineon Technologies

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BF5030
(Rev.:2006)

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF5030...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics - (verified by random sampling)

Forward transconductance

VDS = 3 V, VG2S = 3 V

Gate1 input capacitance

VDS = 3 V, VG2S = 3 V, f = 10 MHz

Output capacitance

VDS = 3 V, VG2S = 3 V, f = 10 MHz

gfs

Cg1ss

Cdss

-

41

- mS

-

2.7

- pF

-

1.6

-

Power gain

VDS = 3 V, ID = 10 mA, VG2S = 3 V,

f = 800 MHz

Gp

dB

-

24

-

VDS = 3 V, ID = 10 mA, VG2S = 3 V,

f = 45 MHz

-

35

-

Noise figure

VDS = 3 V, ID = 10 mA, VG2S = 3 V,

f = 800 MHz

VDS = 3 V, ID = 10 mA, VG2S = 3 V,

f = 45 MHz

F

dB

-

1.3

-

-

1

-

Gain control range

∆Gp

VDS = 3 V, VG2S = 3...0 V , f = 800 MHz

Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod

AGC = 0

AGC = 10 dB

AGC = 40 dB

45

-

90 94

-

92

96 98

-

dB

-

-

-

3

2006-04-13

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