BF5030R データシートの表示（PDF） - Infineon Technologies

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BF5030R

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF5030...

Maximum Ratings

Parameter

Drain-source voltage

Continuous drain current

Gate 1/ gate 2-source current

Gate 1/ gate 2-source voltage

Total power dissipation

TS ≤ 94 °C, BF5030W

TS ≤ 76 °C, BF5030, BF5030R

Symbol

VDS

ID

IG1S, IG2S

VG1S, VG2S

Ptot

Value

8

25

±1

±6

200

200

Storage temperature

Channel temperature

Thermal Resistance

Tstg

-55 ... 150

Tch

150

Parameter

Channel - soldering point1)

BF5030W

BF5030, BF5030R

Symbol

Rthchs

Value

≤ 280

≤ 370

1For calculation of RthJA please refer to Application Note Thermal Resistance

Unit

V

mA

mA

V

mW

°C

Unit

K/W

2

2009-05-05

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