AFM04P2-000 データシートの表示（PDF） - Alpha Industries
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AFM04P2-000 Datasheet PDF : 3 Pages
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Ka Band Power GaAs MESFET Chip
AFM04P2-000
Typical Performance Data
1.00
0.75
0.50
0.25
0
0
50
100
150
200
TBASE (˚C)
Power Derating
TOM-2 Model Parameters
Parameter
BETA
VPO
U
GAMA
Q
NG
ND
DELT
ALFA
T
CGSO
CGDO
VBI
IS
N
IBO
NR
VBD
RG
RD
RS
LG
LD
LS
CDS
RDSD
CDSD
CGE
CDE
Description
Transconductance Coefficient
Pinch-off voltage
Mobility degradation fitting parameter
Slope parameter of pinch-off voltage
Power law parameter
Subthreshold slope gate parameter
Subthreshold slope drain parameter
Slope of drain characteristics in the saturated region
Slope of drain characteristics in the linear region
Channel transmit-time delay
Gate-source Schottky barrier capacitance at VGS = 0
Gate-drain Schottky barrier capacitance at VGS = 0
Built-in barrier potential
Diode saturation current
Diode ideality factor
Breakdown saturation current
Breakdown ideality factor
Breakdown voltage
Gate terminal resistance
Drain terminal resistance
Source terminal resistance
Gate lead inductance
Drain lead inductance
Source lead inductance
Drain-source capacitance
Channel trapping resistance
Low frequency trapping resistance
Gate-source electrode capacitance
Drain-source electrode capacitance
150
VGS = 0 V
120
-0.5 V
90
-1.0 V
60
-1.5 V
30
-2.0 V
-2.5 V
0
0
1
2
3
4
5
VDS (V)
I-V
Unit
A/V2
V
/V
/A, V
/V
pS
pF
pF
V
A
A
V
Ω
Ω
Ω
nH
nH
nH
pF
Ω
nF
fF
fF
Default
0.09464
-1.8760
0.3599
0.03458
1.6560
0.6025
0.6050
0.5633
1.9400
6.4330
0.4232
0.03138
1.200
0.563e-12
1.1000
1.000e-16
10.0
20.00
1.0000
2.0000
0.8000
0.5572
0.2279
0.03532
0.1555
107.99
12.03
7.7240
9.4390
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
3
Specifications subject to change without notice. 12/99A
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