Q62702-G0080 データシートの表示（PDF） - Infineon Technologies

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Q62702-G0080

GaAs MMIC

Infineon Technologies 

GaAs Components

CGY 196

DC Characteristics

Characteristics Symbol

Drain current

stage 1 - 3

Transconductance

stage 1 - 3

IDSS1

IDSS2

IDSS3

GFS1

GFS2

GFS3

Limit Values

min. typ. max.

30 45 75

45 65 110

230 340 515

50 90 130

80 130 170

150 220 300

Unit

mA

mA

mA

mS

mS

mS

Test Conditions

VD1 = 3 V

VD2 = 3 V

VD3 = 3 V

VD = 3 V,

ID = 50 mA

VD = 3 V,

ID = 300 mA

VD = 3 V,

ID = 300 mA

Determination of Permissible Total Power Dissipation for Continuous and Pulse

Operation

The dissipated power is the power which remains in the chip and heats the device. It

does not contain RF signals which are coupled out consistently.

a) Continuous Wave/DC Operation

For the determination of the permissible total power dissipation Ptot-DC from the diagram

below it is necessary to obtain the temperature of the soldering point TS first. There are

two cases:

• When RthSA (soldering point to ambient) is not known: Measure TS with a temperature

sensor at the leads were the heat is transferred from the device to the board

(normally at the widest source or ground lead for GaAs). Use a small sensor of low

heat transport, for example a thermoelement (< 1 mm) with thin wires or a

temperature indicating paper while the device is operating.

• When RthSA is already known: TS = PDiss × RthSA + TA

Data Sheet

3

2001-01-01

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