KSB1015 データシートの表示（PDF） - Fairchild Semiconductor

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KSB1015

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSB1015

Low Frequency Power Amplifier

• Low Collector Emitter Saturation Voltage

• Complement to KSD1406

1

TO-220F

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

IB

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Base Current

Collector Dissipation (TC=25°C)

Junction Temperature

Storage Temperature

Value

- 60

- 60

-7

-3

- 0.5

25

150

- 55 ~ 150

Units

V

V

V

A

A

W

°C

°C

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCEO

ICBO

IEBO

hFE1

hFE2

VCE(sat)

VBE(on)

fT

Cob

tON

tSTG

tF

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Current Gain Bandwidth Product

Output Capacitance

Turn ON Time

Storage Time

Fall Time

IC = - 50mA, IB = 0

VCB = - 60V, IE = 0

VEB = - 7V, IC = 0

VCE = - 5V, IC = - 0.5A

VCE = - 5V, IC = - 3A

IC = - 3A, IB = - 0.3A

VCE = - 5V, IC = - 0.5A

VCE = - 5V, IC = - 0.5A

VCB = - 10V, f = 1MHz

VCC = - 30V, IC = - 1A

IB1 = -IB2 = -0.2A

RL = 30Ω

Min.

- 60

60

20

Typ.

- 0.5

- 0.7

9

150

0.4

1.7

0.5

Max.

- 100

- 100

200

Units

V

µA

µA

-1

V

-1

V

MHz

pF

µs

µs

µs

hFE Classification

Classification

hFE1

O

60 ~ 120

Y

100 ~ 200

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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