KSC5367 データシートの表示（PDF） - Fairchild Semiconductor

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KSC5367

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

KSC5367

High Voltage and High Reliability

• High speed Switching

• Wide Safe Operating Area

• High Collector Base Voltage

1

TO-220

1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current

IBP

*Base Current (Pulse)

PC

Power Dissipation(Tc=25)

TJ

Junction Temperature

TSTG

Storage Temperature

* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%

Value

1600

800

12

3

6

2

4

80

150

- 65 ~ 150

Thermal Characteristics TC=25°C unless otherwise noted

Symbol

Characteristics

Rθjc

Thermal Resistance

Junction to Case

Rθja

Junction to Ambient

Rating

1.56

62.5

Units

V

V

V

A

A

A

A

W

°C

°C

Unit

°C/W

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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