KSC5367 データシートの表示（PDF） - Fairchild Semiconductor

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KSC5367

NPN Triple Diffused Planar Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

5

4

IB = 1.4A

IB = 1.2A

IB = 1A

3

IB = 0.8A

IB = 0.6A

IB = 0.4A

2

IB = 0.2A

1

0

0

2

4

6

8

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

10

IC = 10IB

1

VBE(sat)

VCE(sat)

0.1

0.01

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10

VCC=125V

IC=0.5A

IB1=42mA

tSTG

1

t

ON

tF

0.1

0.01

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 5. Switching Time

©2001 Fairchild Semiconductor Corporation

100

VCE = 5V

VCE = 3V

10

1

0.1

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

10

VCC=250V IC=5IB1=-2.5IB1

tSTG

1

tF

tON

0.1

0.01

0.01

0.1

1

10

IC[A], COLLECTOR CURRENT

Figure 4. Switching Time

10

PULSE

DC

1

0.1

100µs

1ms

5ms

0.01

1E-3

1

10

100

1000

VCE[V], COLLECTOR EMITTER VOLTAGE

Figure 6. Safe Operating Area

Rev. A1, June 2001

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