KSH350 データシートの表示（PDF） - Inchange Semiconductor

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KSH350

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

KSH350

DESCRIPTION

·Lead formed for surface mount applications(NO suffix)

·Straight lead(IPAK,“－I”suffix)

·DPAK for surface mount applications

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·High voltage power transistors

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-300

V

VCEO Collector-Emitter Voltage

-300

V

VEBO

Emitter-Base Voltage

-3

V

IC

Collector Current-Continuous

PC

Total Power Dissipation

@ Ta=25℃

PC

Total Power Dissipation

@ TC=25℃

-0.5

A

1.56

W

15

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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