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DSE010 データシートの表示(PDF) - SANYO -> Panasonic

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DSE010
SANYO
SANYO -> Panasonic SANYO
DSE010 Datasheet PDF : 2 Pages
1 2
Ordering number:EN4705
DSE010
Silicon Epitaxial Planar Type
Very High-Speed Switching Diode
Features
· Ideally suited for use in hybrid ICs because of very
small-sized package.
· Fast switching speed.
· Small interterminal capacitance.
Package Dimensions
unit:mm
1260
[DSE010]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFM
1 µs
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Marking : C
trr Test Circuit
Symbol
Conditions
VF
IF=100mA
IR
VR=80V
C
VR=0.5V, f=1MHz
trr
IF=10mA, VR=6V, RL=50, Irr=0.1Irp
A:Anode
C:Cathode
Ratings
Unit
90 V
80 V
225 mA
100 mA
500 mA
125 ˚C
–55 to +125 ˚C
Ratings
Unit
min
typ
max
1.2 V
0.5 µA
3.0 pF
4.0 ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53098HA (KT)/42294MO (KOTO)/AX-9231 No.4705-1/2

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