HAT1044M データシートの表示（PDF） - Hitachi -> Renesas Electronics
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HAT1044M Datasheet PDF : 4 Pages
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HAT1044M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
-30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID*2
-4.5
A
Drain peak current
I *1
D(pulse)
-18
A
Body-drain diode reverse drain current IDR*2
-4.5
A
Channel dissipation
Pch
*2
(pulse)
2.0
W
Pch *3
(continuous)
1.05
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW≤ 5s,Ta=25°C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS -30
Gate to source leak current
I GSS
—
Zero gate voltege drain current
I DSS
—
Gate to source cutoff voltage
VGS(off)
-1.0
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance
|yfs|
3
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 1. Pulse test
Typ Max
—
—
—
±0.1
—
-1
—
-2.5
50
60
80
105
5.5 —
600 —
220 —
150 —
12
—
85
—
55
—
55
—
-0.95 —
50
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
VGS = ±20V, VDS = 0
VDS = -30 V, VGS = 0
VDS = -10V, I D = -1mA
ID = -3A, VGS = -10V *1
ID = -3A, VGS = -4.5V *1
ID = -3A, VDS = -10V *1
VDS = -10V
VGS = 0
f = 1MHz
VGS = -10V, ID = -3A
RL = 3.3Ω
IF = -4.5A, VGS = 0 *1
IF = -4.5A, VGS = 0
diF/ dt =-20A/µs
2
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