HM628512CLTT-7 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HM628512CLTT-7

4 M SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM628512C Series

4 M SRAM (512-kword × 8-bit)

ADE-203-1212 (Z)

Preliminary

Rev. 0.0

Sep. 12, 2000

Description

The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,

higher performance and low power consumption by employing Hi-CMOS process technology. The device,

packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is

available for high density mounting. The HM628512C is suitable for battery backup system.

Features

• Single 5 V supply

• Access time: 55/70 ns (max)

• Power dissipation

 Active: 50 mW/MHz (typ)

 Standby: 10 µW (typ)

• Completely static memory. No clock or timing strobe required

• Equal access and cycle times

• Common data input and output: Three state output

• Directly TTL compatible: All inputs and outputs

• Battery backup operation

Preliminary: The specification of this device are subject to change without notice. Please contact your

nearest Hitachi’s Sales Dept. regarding specification.

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