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HS-508ARH-T データシートの表示(PDF) - Intersil

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HS-508ARH-T Datasheet PDF : 3 Pages
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Die Characteristics
DIE DIMENSIONS:
(2108µm x 2743µm x 279µm ±25.4µm)
83 x 108 x 11mils ±1mil
METALLIZATION:
Type: Al Si
Thickness: 12.5kÅ ±2kÅ
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Silicon
Metallization Mask Layout
HS-508ARH-T
PASSIVATION:
Type: Silox (SiO2)
Thickness: 8.0kÅ ±1.0kÅ
WORST CASE CURRENT DENSITY:
6.68e4 A/cm2
TRANSISTOR COUNT:
253
PROCESS:
CMOS-DI
HS-508ARH-T
IN3
IN4
EN
OUT
A0
A1
IN8
IN7
A2
IN6
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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