CGY181 データシートの表示（PDF） - Infineon Technologies

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CGY181

GaAs MMIC

Infineon Technologies 

CGY 181

Output Power at Different

Temperatures, VD = 5 V,

VG = – 4 V, f = 1.75 GHz, pulsed with a

duty cycle of 10% (ton = 0.33 ms)

35

EHT08671

dBm

POUT 33

32

31

30

29

28

27

-20 ˚C

26

20 ˚C

25

70 ˚C

24

23

22

21

20

19

18

17

16

15

14

-6 -2 2 6 10 14 dBm 20

PIN

Measured S-Parameter at VD = 3.6 V and

Pin = 16 dBm, VG = – 4 V, VTR connected

to ground, pulsed with a duty cycle of 10%

(ton = 0.33 ms)

30

dB

MAG 25

EHT08673

20

S21

15

10

5

0

-5

S11

-10

-15

-20

1400 1500 1600 1700 1800 1900 MHz 2100

f

Power Added Efficiency at Different

Temperatures, VD = 5 V,

VG = – 4 V, f = 1.75 GHz, pulsed with a

duty cycle of 10% (ton = 0.33 ms)

40

%

PAE 35

EHT08672

30

25

20

-20 ˚C

15

20 ˚C

70 ˚C

10

5

0

-6 -2 2 6 10 14 dBm 20

PIN

Measured S-Parameter at VD = 5 V and

Pin = 16 dBm, VG = – 4 V, VTR connected

to ground, pulsed with a duty cycle of 10%

(ton = 0.33 ms)

30

dB

MAG 25

EHT08674

20

S21

15

10

5

0

-5

S11

-10

-15

-20

1400 1500 1600 1700 1800 1900 MHz 2100

f

Data Book

7

03.00

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