MMBD3004A データシートの表示（PDF） - Yea Shin Technology Co., Ltd

部品番号

コンポーネント説明

メーカー

MMBD3004A

Fast Switching Speed

Yea Shin Technology Co., Ltd 

DATA SHEET

SEMICONDUCTOR

Features

· Fast Switching Speed

· Surface Mount Package Ideally Suited for Automatic

Insertion

· High Conductance

· High Reverse Breakdown Voltage Rating

· Lead Free/RoHS Compliant (Note 3)

Mechanical Data

· Case: SOT-23

· Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

· Moisture Sensitivity: Level 1 per J-STD-020C

· Terminals: Solderable per MIL-STD-202, Method 208

· Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

· Polarity: See Diagram

· Marking: See Diagrams Below and Page 2

· Ordering Information: See below

· Weight: 0.008 grams (approx.)

SOT23

MMBD3004A/C

Unit:inch(mm)

H

Symbol

A

A1

A2

b

c

D

E

E1

e

e1

L

L1

θ

Dimensions In Millimeters

Min

Max

0.900

1.150

0.000

0.100

0.900

1.050

0.300

0.500

0.080

0.150

2.800

3.000

1.200

1.400

2.250

2.550

0.950 TYP

1.800

2.000

0.550 REF

0.300

0.500

0°

8°

TOP VIEW

Dimensions In Inches

Min

Max

0.035

0.045

0.000

0.004

0.035

0.041

0.012

0.020

0.003

0.006

0.110

0.118

0.047

0.055

0.089

0.100

0.037 TYP

0.071

0.079

0.022 REF

0.012

0.020

0°

6°

Maximum Ratings @ TA = 25°C unless otherwise specified

MMBD3004A Marking: KAD MMBD3004C Marking: KAC

Characteristic

Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current (Note 2)

Peak Repetitive Forward Current (Note 2)

Non-Repetitive Peak Forward Surge Current @ t = 1.0ms

@ t = 1.0s

Power Dissipation (Note 2)

Thermal Resistance Junction to Ambient Air (Note 2)

Operating and Storage Temperature Range

Symbol

VRRM

VRWM

VR

VR(RMS)

IF

IFRM

IFSM

Pd

RqJA

Tj , TSTG

Value

350

300

212

225

625

4.0

1.0

350

357

-65 to +150

Unit

V

V

V

mA

mA

A

mW

°C/W

°C

Electrical Characteristics @ TA = 25°C unless otherwise specified, per element

Characteristic

Reverse Breakdown Voltage (Note 1)

Forward Voltage (Note 1)

Reverse Current (Note 1)

Total Capacitance

Reverse Recovery Time

Symbol Min

V(BR)R 350

VF

¾

IR

¾

CT

¾

trr

¾

Typ

¾

0.78

0.93

1.03

30

35

1.0

¾

Max

¾

0.87

1.0

1.25

100

100

5.0

50

Unit

V

V

nA

mA

pF

ns

Test Condition

IR = 150mA

IF = 20mA

IF = 100mA

IF = 200mA

VR = 240V

VR = 240V, Tj = 150°C

VR = 0V, f = 1.0MHz

IF = IR = 30mA,

Irr = 3.0mA, RL = 100W

Notes: 1. Short duration test pulse used to minimize self-heating effect.

2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. No purposefully added lead.

http://www.yeashin.com

1

REV.02 20120305

Share Link: