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BB101C データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
BB101C
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
BB101C Datasheet PDF : 11 Pages
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BB101C
Drain Current vs.Gate1 Voltege
20
V
DS
= 5 V
16
R
G
= 220 k
Ω
12
4V
3V
8
2V
4
V
G2S
= 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
V
DS
= 5 V
R
G
= 150 k
Ω
20 f = 1 kHz
4V
3V
15
2V
10
5
V
G2S
= 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Drain Current vs.Gate1 Voltege
20
V
DS
= 5 V
R
G
= 390 k
Ω
16
12
8
4V
3V
2V
4
V
G2S
= 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
V
DS
= 5 V
R
G
= 220 k
Ω
20
f = 1 kHz
4V
3V
15
2V
10
5
V
G2S
= 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
6
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