NXP Semiconductors
BB202LX
Low-voltage variable capacitance diode
40
Cd
(pF)
30
001aae545
0.8
rs
(Ω)
0.6
001aae546
20
0.4
10
0.2
0
10−1
1
10
VR (V)
Fig 1.
f = 1 MHz; Tj = 25 C.
Diode capacitance as a function of reverse
voltage; typical values
0
10−1
1
10
102
VR (V)
Fig 2.
f = 470 MHz; Tj = 25 C.
Diode serial resistance as a function of reverse
voltage; typical values
103
IR
(nA)
102
001aae541
10−2
TCCd
(K−1)
10−3
001aae542
10
10−4
1
0
20
40
60
80
100
Tj (°C)
Fig 3. Reverse current as a function of junction
temperature; maximum values
10−5
10−1
1
10
102
VR (V)
Fig 4.
Tj = 0 C to 85 C.
Temperature coefficient of diode capacitance
as a function of reverse voltage; typical values
BB202LX
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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