HM62V8512C データシートの表示（PDF） - Renesas Electronics

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HM62V8512C

4 M SRAM (512-kword × 8-bit)

Renesas Electronics 

HM62V8512C Series

DC Characteristics

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

Output leakage current

|ILI|

—

|ILO|

—

Operating power supply current: DC

I CC

—

Operating power power supply current ICC1

—

I CC2

—

Standby power supply current: DC

I SB

—

Standby power supply current (1): DC

I SB1

—

—

—1

µA Vin = VSS to VCC

—1

µA CS = VIH or OE = VIH or

WE = VIL, VI/O = VSS to VCC

5

10 mA CS = VIL,

others = VIH/VIL, II/O = 0 mA

8 25 mA Min cycle, duty = 100%

CS = VIL, others = VIH/VIL

II/O = 0 mA

2 5 mA Cycle time = 1 µs,

duty = 100%

II/O = 0 mA, CS ≤ 0.2 V

VIH ≥ VCC – 0.2 V,

VIL ≤ 0.2 V

0.1 0.3 mA CS = VIH

0.5*2 20*2 µA Vin ≥ 0 V,

CS ≥ VCC – 0.2 V

0.5*3 10*3 µA

Output low voltage

VOL

—

— 0.4 V IOL = 2.1 mA

—

— 0.2 V IOL = 100 µA

Output high voltage

VOH

VCC – 0.2 — — V IOH = –100 µA

2.4

— — V IOH = –1.0 mA

Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.

2. This characteristics is guaranteed only for L version.

3. This characteristics is guaranteed only for L-SL version.

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Typ

Max

Input capacitance*1

Cin

—

8

Input/output capacitance*1 CI/O

—

10

Note: 1. This parameter is sampled and not 100% tested.

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

6

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