5LP01SP-AC データシートの表示（PDF） - ON Semiconductor

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5LP01SP-AC

P-Channel Small Signal MOSFET

ON Semiconductor 

5LP01SP

Electrical Characteristics at Ta=25°C

Parameter

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Static Drain to Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Forward Diode Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

gFS

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=-1mA, VGS=0V

VDS=-50V, VGS=0V

VGS=±8V, VDS=0V

VDS=-10V, ID=-100μA

VDS=-10V, ID=-40mA

ID=-40mA, VGS=-4V

ID=-20mA, VGS=-2.5V

ID=-5mA, VGS=-1.5V

VDS=-10V, f=1MHz

See specified Test Circuit.

VDS=-10V, VGS=-10V, ID=-70mA

IS=-70mA, VGS=0V

Value

Unit

min

typ

max

-50

V

10

μA

±10

μA

-0.4

-1.4

V

70

100

mS

18

23

Ω

20

28

Ω

30

60

Ω

7.4

pF

4.2

pF

1.3

pF

20

ns

35

ns

160

ns

150

ns

1.40

nC

0.16

nC

0.23

nC

0.85

1.2

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

Switching Time Test Circuit

VIN

0V

--4V

VIN

PW=10μs

D.C.≤1%

VDD= --25V

ID= --40mA

RL=607Ω

D

VOUT

G

5LP01SP

P.G

50Ω S

No.6621-2/6

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