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RF2045 データシートの表示(PDF) - RF Micro Devices

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RF2045
RFMD
RF Micro Devices RFMD
RF2045 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Preliminary
4
RF2045
GENERAL PURPOSE AMPLIFIER
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
Product Description
4
The RF2045 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
45°
+ 1°
0.055
0.020
+ 0.005
+ 0.002
0.070
sq.
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.040
+ 0.002
0.200 sq.
Typ
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
GND
4
MARKING - C5
3 RF OUT
2
GND
Functional Block Diagram
Package Style: Micro-X Ceramic
Features
• DC to 6000MHz Operation
• Internally matched Input and Output
• 13dB Small Signal Gain
• +32dBm Output IP3
• +18dBm Output Power
• Excellent Gain Flatness
Ordering Information
RF2045
General Purpose Amplifier
RF2045 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 010110
4-13

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