RF2045 データシートの表示（PDF） - RF Micro Devices

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RF2045

GENERAL PURPOSE AMPLIFIER

RF Micro Devices 

RF2045

Preliminary

Absolute Maximum Ratings

Parameter

Supply Current

Input RF Power

Operating Ambient Temperature

Storage Temperature

Rating

120

+20

-40 to +85

-60 to +150

Unit

mA

dBm

°C

°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

Specification

Unit

Min.

Typ.

Max.

Condition

Overall

4

Frequency Range

3dB Bandwidth

DC to 6000

6

Gain

13.8

13.7

11

13.6

13.4

13

Gain Flatness

±0.2

Noise Figure

5.0

Input VSWR

1.7:1

Output VSWR

1.7:1

Output IP3

+33

Output P1dB

+17.8

Reverse Isolation

18.4

Thermal

ThetaJC

173

Maximum junction temperature

142

Mean Time Between Failures

1.5 x 103

Mean Time Between Failures

3.7 x 105

Mean Time Between Failures

2.0 x 109

Power Supply

MHz

GHz

dB

dB

dB

dB

dB

dB

dBm

dBm

dB

°C/W

°C

years

years

years

T=25 °C, ICC=65mA

Freq = 100 MHz

Freq = 1000 MHz

Freq =2000 MHz

Freq = 3000 MHz

Freq = 4000 MHz

100MHz to 2000MHz

Freq = 1000 MHz

In a 50Ω system, DC to 4000MHz

In a 50Ω system, DC to 4000MHz

Freq=1000MHz±50kHz, PTONE=-10dBm

Freq =1000 MHz

Freq =2000 MHz

ICC=65mA, PDISS=310mW

TAMB = +85 °C

TAMB = +25 °C

TAMB = -40 °C

With 22Ω bias resistor

Device Operating Voltage

Operating Current

4.6

5.0

5.6

V

At pin 3 with ICC=65mA

65

mA

4-14

Rev A5 010110

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