RF2127 データシートの表示（PDF） - RF Micro Devices

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RF2127

MEDIUM POWER LINEAR AMPLIFIER

RF Micro Devices 

2

Typical Applications

• DECT Cordless Applications

• PCS Communication Systems

RF2127

MEDIUM POWER LINEAR AMPLIFIER

• Commercial and Consumer Systems

• Portable Battery-Powered Equipment

2

Product Description

The RF2127 is a medium-power, high-efficiency, linear

amplifier IC. The device is manufactured on an advanced

Gallium Arsenide Heterojunction Bipolar Transistor (HBT)

process, and has been designed for use as the final RF

amplifier in 1800MHz digital PCS phone transmitters

requiring linear amplification operating between

1800MHz and 1900MHz, with over 100mW transmitted

power. It will also function as the driver stage for the

RF2125 high power amplifier. A simple power down func-

tion is included for TDD operation.

Optimum Technology Matching® Applied

Si BJT

üGaAs HBT

GaAs MESFET

Si Bi-CMOS

SiGe HBT

Si CMOS

VCC2 1

GND1 2

PD 3

RF IN 4

BIAS

CIRCUITS

8 VCC1

7 RF OUT

6 RF OUT

5 GND2

0.160

0.152

0.018

0.014

-A-

0.010

0.004

0.200

0.192

0.050

0.248

0.232

0.059

0.057

8° MAX

0° MIN

0.0100

0.0076

0.0500

0.0164

NOTES:

1. Shaded lead is pin 1.

2. All dimensions are excluding flash, protrusions or burrs.

3. Lead coplanarity: 0.005 with respect to datum "A".

4. Package surface finish: Matte (Charmilles #24~27).

Package Style: SOIC-8

Features

• Single 3.0V to 6.5V Supply

• 100mW Linear Output Power

• 25dB Small Signal Gain

• 30% Efficiency

• Digitally Controlled Power Down Mode

• 1500MHz to 1900MHz Operation

Ordering Information

RF2127

Medium Power Linear Amplifier

RF2127 PCBA Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Rev A3 010720

2-79

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